Chemical kinetics and equilibrium analysis of I-III-VI films
Identifieur interne : 014255 ( Main/Repository ); précédent : 014254; suivant : 014256Chemical kinetics and equilibrium analysis of I-III-VI films
Auteurs : RBID : Pascal:99-0324134Descripteurs français
- Pascal (Inist)
- 8115, 6855N, 8460J, Etude expérimentale, Méthode mesure, Etude théorique, Couche mince, Cuivre composé, Indium composé, Sulfure, Séléniure, Dépôt, Composition chimique, Cinétique chimique, Thermodynamique, Cellule solaire, Soufre composé, Sélénium composé, Dépôt phase vapeur, Analyse chimique, Réaction chimique, Cinétique réaction.
- Wicri :
- concept : Thermodynamique.
English descriptors
- KwdEn :
- Chemical analysis, Chemical composition, Chemical reaction kinetics, Chemical reactions, Copper compounds, Deposition, Experimental study, Indium compounds, Measuring methods, Reaction kinetics, Selenides, Selenium compounds, Solar cells, Sulfides, Sulfur compounds, Theoretical study, Thermodynamics, Thin films, Vapor deposition.
Abstract
Preliminary results are presented on the growth and characterization of Cu-In-Se-S thin films formed by reaction of Cu-In layers with a H2Se/H2S gas mixture. The approach was to first develop a process to grow device quality CuInS2 films by reaction of a Cu-In layer in H2S. This process was then modified to form alloyed CuIn(Se,S)2 films. A quantitative model for the reaction of Cu-In films in a CVD reactor with a mixed H2S-H2Se flowing gas was developed and verified. The composition of the CuIn(Se,S)2 film can be controlled by the concentration H2Se+H2S and/or Se2+S2 in the gas phase. Graded films can be made by annealing either CuInSe2 or CuInS2 films in a controlled Se and/or S containing atmosphere. Expanding this to include Ga in the films will provide a basis for engineering film compositions and bandgaps. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Chemical kinetics and equilibrium analysis of I-III-VI films</title><author><name sortKey="Birkmire, Robert" uniqKey="Birkmire R">Robert Birkmire</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Engelmann, Michael" uniqKey="Engelmann M">Michael Engelmann</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0324134</idno><date when="1999-03-05">1999-03-05</date><idno type="stanalyst">PASCAL 99-0324134 AIP</idno><idno type="RBID">Pascal:99-0324134</idno><idno type="wicri:Area/Main/Corpus">014C46</idno><idno type="wicri:Area/Main/Repository">014255</idno></publicationStmt><seriesStmt><idno type="ISSN">0094-243X</idno><title level="j" type="abbreviated">AIP conf. proc.</title><title level="j" type="main">AIP conference proceedings</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical analysis</term><term>Chemical composition</term><term>Chemical reaction kinetics</term><term>Chemical reactions</term><term>Copper compounds</term><term>Deposition</term><term>Experimental study</term><term>Indium compounds</term><term>Measuring methods</term><term>Reaction kinetics</term><term>Selenides</term><term>Selenium compounds</term><term>Solar cells</term><term>Sulfides</term><term>Sulfur compounds</term><term>Theoretical study</term><term>Thermodynamics</term><term>Thin films</term><term>Vapor deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115</term><term>6855N</term><term>8460J</term><term>Etude expérimentale</term><term>Méthode mesure</term><term>Etude théorique</term><term>Couche mince</term><term>Cuivre composé</term><term>Indium composé</term><term>Sulfure</term><term>Séléniure</term><term>Dépôt</term><term>Composition chimique</term><term>Cinétique chimique</term><term>Thermodynamique</term><term>Cellule solaire</term><term>Soufre composé</term><term>Sélénium composé</term><term>Dépôt phase vapeur</term><term>Analyse chimique</term><term>Réaction chimique</term><term>Cinétique réaction</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Thermodynamique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Preliminary results are presented on the growth and characterization of Cu-In-Se-S thin films formed by reaction of Cu-In layers with a H<sub>2</sub>Se/H<sub>2</sub>S gas mixture. The approach was to first develop a process to grow device quality CuInS<sub>2</sub> films by reaction of a Cu-In layer in H<sub>2</sub>S. This process was then modified to form alloyed CuIn(Se,S)<sub>2</sub> films. A quantitative model for the reaction of Cu-In films in a CVD reactor with a mixed H<sub>2</sub>S-H<sub>2</sub>Se flowing gas was developed and verified. The composition of the CuIn(Se,S)<sub>2</sub> film can be controlled by the concentration H<sub>2</sub>Se+H<sub>2</sub>S and/or Se<sub>2</sub>+S<sub>2</sub> in the gas phase. Graded films can be made by annealing either CuInSe<sub>2</sub> or CuInS<sub>2</sub> films in a controlled Se and/or S containing atmosphere. Expanding this to include Ga in the films will provide a basis for engineering film compositions and bandgaps. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0094-243X</s0></fA01><fA02 i1="01"><s0>APCPCS</s0></fA02><fA03 i2="1"><s0>AIP conf. proc.</s0></fA03><fA05><s2>462</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Chemical kinetics and equilibrium analysis of I-III-VI films</s1></fA08><fA11 i1="01" i2="1"><s1>BIRKMIRE (Robert)</s1></fA11><fA11 i1="02" i2="1"><s1>ENGELMANN (Michael)</s1></fA11><fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>23-28</s1></fA20><fA21><s1>1999-03-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21757</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0324134</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>AIP conference proceedings</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Preliminary results are presented on the growth and characterization of Cu-In-Se-S thin films formed by reaction of Cu-In layers with a H<sub>2</sub>Se/H<sub>2</sub>S gas mixture. The approach was to first develop a process to grow device quality CuInS<sub>2</sub> films by reaction of a Cu-In layer in H<sub>2</sub>S. This process was then modified to form alloyed CuIn(Se,S)<sub>2</sub> films. A quantitative model for the reaction of Cu-In films in a CVD reactor with a mixed H<sub>2</sub>S-H<sub>2</sub>Se flowing gas was developed and verified. The composition of the CuIn(Se,S)<sub>2</sub> film can be controlled by the concentration H<sub>2</sub>Se+H<sub>2</sub>S and/or Se<sub>2</sub>+S<sub>2</sub> in the gas phase. Graded films can be made by annealing either CuInSe<sub>2</sub> or CuInS<sub>2</sub> films in a controlled Se and/or S containing atmosphere. 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